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| 2SK3516-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Symbol Ratings Unit V VDS 450 A ID 8 A ID(puls] 32 V VGS 30 A IAR *2 8 mJ EAS *1 193 kV/s dVDS/dt *4 20 dV/dt *3 5 kV/s PD Ta=25C 1.67 W Tc=25C 65 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C *1 L=5.53mH, Vcc=45V *2 Tch <150C *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 450V = Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=4A VGS=10V RGS=10 VCC=225V ID=8A VGS=10V L=5.53mH Tch=25C IF=8A VGS=0V Tch=25C IF=8A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 450 3.0 Typ. Max. 5.0 25 250 100 0.65 Units V V A nA S pF 4 10 0.50 8 800 1200 120 150 4.5 7 15 23 12 18 25 38 7 11 22 33 9.5 14.5 6.5 10 1.00 0.7 3.5 ns nC 8 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.92 75.0 Units C/W C/W 1 2SK3516-01L,S,SJ Characteristics FUJI POWER MOSFET 80 70 60 Allowable Power Dissipation PD=f(Tc) Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=45V,I(AV)<=8A 300 250 200 50 EAV [mJ] 0 25 50 75 100 125 150 PD [W] 40 30 20 150 100 50 10 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 28 26 24 22 20 20V 10V 10 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 7.0V VGS=6.5V 7.5V ID[A] 1 0.1 0 18 8V 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 2.0 1.8 1.6 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS=6.5V 7.0V 7.5V 8V 10V 20V RDS(on) [ ] 0.1 1 10 10 1.2 1.0 0.8 0.6 0.4 0.2 gfs [S] 1 0.1 0.0 0 5 10 15 20 25 ID [A] ID [A] 2 2SK3516-01L,S,SJ FUJI POWER MOSFET 2.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V Gate Threshold Voltage vs. Tch 7.0 6.5 6.0 5.5 VGS(th)=f(Tch):VDS=VGS,ID=250A 1.5 5.0 max. VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 min. 1.0 max. typ. 0.5 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics 24 22 20 18 16 14 360V Vcc= 90V 225V VGS=f(Qg):ID=8A, Tch=25C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 1n Ciss VGS [V] C [F] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10 IF=f(VSD):80s Pulse test,Tch=25C 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 1 VSD [V] ID [A] 3 2SK3516-01L,S,SJ FUJI POWER MOSFET 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [*Z/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=45V Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -2 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET Type(L) Type(S) FUJI POWER MOS FET Type(SJ) FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. 4 See Note: 1. Trademark Fig. 1. Fig. 1. See Note: 1. Trademark Trademark Lot No. Lot No. Type name Lot No. Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating CONNECTION Pre-Solder Notes 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4 |
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